Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3574441
Title: Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes
Authors: Dai, K.
Soh, C.B.
Chua, S.J. 
Wang, L.
Huang, D.
Issue Date: 15-Apr-2011
Source: Dai, K., Soh, C.B., Chua, S.J., Wang, L., Huang, D. (2011-04-15). Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes. Journal of Applied Physics 109 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3574441
Abstract: ZnO nanorod arrays (ZNAs) were hydrothermally synthesized on the surface of patterned indium-doped tin oxide p-type contact (PIPC) of GaN-based light-emitting diodes (GaN-LEDs) for enhancing the light extraction efficiency (LEE). It was found that the alignment of the ZnO nanorod arrays in the grooves of the PIPC was poorer than these grown on the ridges of the PIPC. By comparing the light output of the GaN-LEDs with and without ZNAs grown in the grooves of PIPC, the influence of the alignment of ZNAs on the LEE of GaN-LEDs was revealed and investigated. Numerical analysis based on the finite difference of time domain (FDTD) method suggested that the poorer alignment of ZNAs grown on GaN-LEDs resulted in more energy reflected back into GaN-LEDs and lower light extraction efficiency. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56332
ISSN: 00218979
DOI: 10.1063/1.3574441
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