Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3003081
Title: Influence of substrate geometry on the distribution and stress on Ge nanocrystals in silicon oxide matrix
Authors: Zheng, F.
Choi, W.K. 
Liew, T.H. 
Issue Date: 2008
Source: Zheng, F., Choi, W.K., Liew, T.H. (2008). Influence of substrate geometry on the distribution and stress on Ge nanocrystals in silicon oxide matrix. Journal of Applied Physics 104 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3003081
Abstract: Synthesis of germanium (Ge) nanocrystals embedded in silicon oxide matrix was carried out on cosputtered Ge plus silicon oxide films deposited on the surface of silicon (Si) wafer etched with V- or U-grooves. The V- or U-grooves were fabricated via the laser interference lithography technique. We found that the substrate geometry has a significant influence on the distribution of the Ge nanocrystals in the silicon oxide matrix. The variation in the distribution of the nanocrystals in the silicon oxide matrix may be due to defective oxide regions caused by sputter deposited silicon oxide film on the V- or U-grooves or may also be related to the different strain fields in the oxide layer. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56330
ISSN: 00218979
DOI: 10.1063/1.3003081
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