Please use this identifier to cite or link to this item:
|Title:||Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy|
|Authors:||Liu, H.F. |
|Citation:||Liu, H.F., Xiang, N., Chua, S.J. (2006). Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters 89 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335804|
|Abstract:||The authors investigated the synthesis of GaIn(N)As/Ga(N)As multiple quantum wells by molecular beam epitaxy. Introducing N into the GaInAs appears to suppress the incorporation of In as indicated by reflective high-energy electron diffraction (RHEED). This effect is mainly due to the N-induced enhancement of In surface segregation at the growth front and is evidenced by the increasing damping rate of RHEED oscillations with N incorporation. The N-induced enhancement of In segregation in the GalnNAs quantum wells is confirmed by secondary-ion-mass spectroscopy and high-resolution x-ray diffractions, and its origin is discussed. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 16, 2018
WEB OF SCIENCETM
checked on May 16, 2018
checked on May 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.