Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2335804
Title: Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy
Authors: Liu, H.F. 
Xiang, N. 
Chua, S.J.
Issue Date: 2006
Source: Liu, H.F., Xiang, N., Chua, S.J. (2006). Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters 89 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335804
Abstract: The authors investigated the synthesis of GaIn(N)As/Ga(N)As multiple quantum wells by molecular beam epitaxy. Introducing N into the GaInAs appears to suppress the incorporation of In as indicated by reflective high-energy electron diffraction (RHEED). This effect is mainly due to the N-induced enhancement of In surface segregation at the growth front and is evidenced by the increasing damping rate of RHEED oscillations with N incorporation. The N-induced enhancement of In segregation in the GalnNAs quantum wells is confirmed by secondary-ion-mass spectroscopy and high-resolution x-ray diffractions, and its origin is discussed. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56327
ISSN: 00036951
DOI: 10.1063/1.2335804
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