Please use this identifier to cite or link to this item:
|Title:||Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement|
|Source:||Hong, Y.D., Yeow, Y.T., Chim, W.-K., Wong, K.-M., Kopanski, J.J. (2004-09). Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement. IEEE Transactions on Electron Devices 51 (9) : 1496-1503. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.833590|
|Abstract:||Although scanning capacitance microscopy (SCM) is based on the MOS capacitance theory, the measurement frequency is 915-MHz instead of 100 kHz to 1 MHz in conventional MOS capacitance-voltage measurement. At this high frequency, the reactance of the probe tip-to-substrate capacitance can become smaller than the series resistance of the substrate inversion layer, particularly when the surface mobility is degraded. The response of the oxide-silicon interface traps to SCM measurement is also different due to the use of a 10-kHz signal to determine dC/dV. In this paper, we compare experimental and simulation data to demonstrate the effects of interface traps and surface mobility degradation on SCM measurement. Implications on the treatment of SCM data for accurate dopant profile extraction are also presented. © 2004 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2017
WEB OF SCIENCETM
checked on Nov 23, 2017
checked on Dec 11, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.