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https://doi.org/10.1063/1.2973211
DC Field | Value | |
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dc.title | Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors | |
dc.contributor.author | Peng, J.W. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Liang, G.C.A. | |
dc.contributor.author | Singh, N. | |
dc.contributor.author | Zhu, S.Y. | |
dc.contributor.author | Lo, G.Q. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-06-17T02:52:43Z | |
dc.date.available | 2014-06-17T02:52:43Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Peng, J.W., Lee, S.J., Liang, G.C.A., Singh, N., Zhu, S.Y., Lo, G.Q., Kwong, D.L. (2008). Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2973211 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/56272 | |
dc.description.abstract | This letter presents the performance improvement of Schottky barrier metal-oxide-semiconductor field-effect transistor by employing gate-all-around (GAA) Si-nanowire (SiNW) structure. Without employing any barrier lowering technique, the mid-band-gap Ni-silicide Schottky barrier transistors demonstrated excellent performance and achieved subthreshold slope of ∼86 mV/decade and on-current of 19 μA/μm on a 12.5 nm SiNW, and subthreshold slope of ∼79 mV/decade and on-current of 207 μA/μm on a 4 nm diameter SiNW. Assisted with simulation, we show that this improvement can be attributed to the strong reduction in the Schottky barrier thickness as a result of the better gate control of GAA SiNW structure. © 2008 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2973211 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.2973211 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 93 | |
dc.description.issue | 7 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000259010300086 | |
Appears in Collections: | Staff Publications |
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