Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2973211
Title: Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors
Authors: Peng, J.W.
Lee, S.J. 
Liang, G.C.A. 
Singh, N.
Zhu, S.Y.
Lo, G.Q.
Kwong, D.L.
Issue Date: 2008
Citation: Peng, J.W., Lee, S.J., Liang, G.C.A., Singh, N., Zhu, S.Y., Lo, G.Q., Kwong, D.L. (2008). Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2973211
Abstract: This letter presents the performance improvement of Schottky barrier metal-oxide-semiconductor field-effect transistor by employing gate-all-around (GAA) Si-nanowire (SiNW) structure. Without employing any barrier lowering technique, the mid-band-gap Ni-silicide Schottky barrier transistors demonstrated excellent performance and achieved subthreshold slope of ∼86 mV/decade and on-current of 19 μA/μm on a 12.5 nm SiNW, and subthreshold slope of ∼79 mV/decade and on-current of 207 μA/μm on a 4 nm diameter SiNW. Assisted with simulation, we show that this improvement can be attributed to the strong reduction in the Schottky barrier thickness as a result of the better gate control of GAA SiNW structure. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56272
ISSN: 00036951
DOI: 10.1063/1.2973211
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