Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2973211
Title: Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors
Authors: Peng, J.W.
Lee, S.J. 
Liang, G.C.A. 
Singh, N.
Zhu, S.Y.
Lo, G.Q.
Kwong, D.L.
Issue Date: 2008
Source: Peng, J.W., Lee, S.J., Liang, G.C.A., Singh, N., Zhu, S.Y., Lo, G.Q., Kwong, D.L. (2008). Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2973211
Abstract: This letter presents the performance improvement of Schottky barrier metal-oxide-semiconductor field-effect transistor by employing gate-all-around (GAA) Si-nanowire (SiNW) structure. Without employing any barrier lowering technique, the mid-band-gap Ni-silicide Schottky barrier transistors demonstrated excellent performance and achieved subthreshold slope of ∼86 mV/decade and on-current of 19 μA/μm on a 12.5 nm SiNW, and subthreshold slope of ∼79 mV/decade and on-current of 207 μA/μm on a 4 nm diameter SiNW. Assisted with simulation, we show that this improvement can be attributed to the strong reduction in the Schottky barrier thickness as a result of the better gate control of GAA SiNW structure. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56272
ISSN: 00036951
DOI: 10.1063/1.2973211
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

20
checked on Dec 7, 2017

WEB OF SCIENCETM
Citations

13
checked on Nov 23, 2017

Page view(s)

31
checked on Dec 18, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.