Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2709948
Title: Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability
Authors: Yu, X.
Zhu, C. 
Yu, M.
Issue Date: 2007
Source: Yu, X., Zhu, C., Yu, M. (2007). Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability. Applied Physics Letters 90 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2709948
Abstract: The impact of nitrogen (N) in HfON gate dielectric on electrical characteristics, particularly on charge trapping induced threshold voltage (Vth) instability, has been investigated in n -channel metal-oxide-semiconductor field effect transistor with TaN metal gate. Compared to Hf O2, the enhanced gate capacitance, slightly increased gate leakage current, and degraded interface properties were observed in the HfON gate dielectric. The incorporation of N into Hf O2 also caused mobility degradation at low effective field region. Moreover, charge trapping induced Vth instability was found to be severer in HfON than in Hf O2, which could be attributed to increased bulk traps induced by the incorporated N. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56267
ISSN: 00036951
DOI: 10.1063/1.2709948
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