Please use this identifier to cite or link to this item:
|Title:||Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability|
|Source:||Yu, X., Zhu, C., Yu, M. (2007). Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability. Applied Physics Letters 90 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2709948|
|Abstract:||The impact of nitrogen (N) in HfON gate dielectric on electrical characteristics, particularly on charge trapping induced threshold voltage (Vth) instability, has been investigated in n -channel metal-oxide-semiconductor field effect transistor with TaN metal gate. Compared to Hf O2, the enhanced gate capacitance, slightly increased gate leakage current, and degraded interface properties were observed in the HfON gate dielectric. The incorporation of N into Hf O2 also caused mobility degradation at low effective field region. Moreover, charge trapping induced Vth instability was found to be severer in HfON than in Hf O2, which could be attributed to increased bulk traps induced by the incorporated N. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 14, 2018
WEB OF SCIENCETM
checked on Jan 22, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.