Please use this identifier to cite or link to this item:
|Title:||Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers|
|Source:||Lim, A.E.-J., Fang, W.-W., Liu, F., Lee, R.T.P., Samudra, G., Kwong, D.-L., Yeo, Y.-C. (2007). Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers. Applied Physics Letters 91 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2803762|
|Abstract:||The mechanism underlying the modulation of nickel fully silicided (Ni-FUSI) gate work function m by rare-earth (RE)-based dielectric interlayers (RE: Y, Er, Dy, Tb, Yb, and La) was investigated. RE-O-Si bonding in these ultrathin (∼1 nm) interlayers induces highly polarized RE-O bonds at the gate/dielectric interface. The relative magnitude of the RE-O dipole was estimated from the product of the net electronegativity difference and the charge separation between the RE and O ions. Excellent correlation of the modulated Ni-FUSI m with the calculated dipole moment was shown. The proposed quantitative interfacial dipole model could be used for the selection of interlayer materials for further m optimization and precise control of threshold voltage in transistors. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2017
WEB OF SCIENCETM
checked on Nov 29, 2017
checked on Dec 11, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.