Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1488918
Title: Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistors
Authors: Ong, S.Y.
Chor, E.F. 
Lee, J.
See, A.
Chan, L.
Issue Date: Aug-2002
Source: Ong, S.Y., Chor, E.F., Lee, J., See, A., Chan, L. (2002-08). Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistors. Journal of the Electrochemical Society 149 (8) : G485-G489. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1488918
Abstract: The effects of indium and boron interaction in the channel region on device performance have been investigated. The two main areas of focus are the impact of replacing boron with indium as the channel and pocket implants. These are assessed based on the experimental results of short channel effects (SCE) and reverse short channel effects (RSCE). SCE and RSCE are significantly improved by integrating high-dose boron pocket and low indium implant energy, respectively. Experiments done using an indium pocket show severe degradation in SCE control, possibly due to poor activation of the indium dopant. Last, significant improvement in reverse narrow channel effects has been demonstrated by indium channel narrow devices. All experimental data are supported with process and device simulation results using TSUPREM4 and MEDICI, respectively. This allows a correlation between the channel-doping profile and the electrical data.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/56263
ISSN: 00134651
DOI: 10.1149/1.1488918
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