Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/56220
Title: Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure
Authors: Chim, W.K. 
Cho, B.J. 
Yue, J.M.P.
Keywords: Channel width
Charge pumping
Charge trapping
Electric field
Hot carrier
Impact ionization
Interface state
LOCOS
MOSFET
Issue Date: 2002
Source: Chim, W.K.,Cho, B.J.,Yue, J.M.P. (2002). Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (1) : 47-53. ScholarBank@NUS Repository.
Abstract: Narrow width n-channel metal-oxide-semiconductor field-effect-transistors (nMOSFETs) fabricated with recessed local oxidation of silicon (R-LOCOS) isolation structures and deeper field oxide recess exhibit less hot-carrier degradation as compared to wide channel devices when stressed under the maximum substrate current condition. Through the investigation of many possible causes, such as channel stop doping effect, lateral channel electric field, mechanical stress effect, and recess depth effect, the cause of the smaller degradation in narrow channel nMOSFETs was found. This was due to a hole-attractive vertical electric field across the width of the narrow channel nMOSFET, which results in less interaction of the channel hot electrons with the silicon-silicon dioxide interface, and thus contributing to less interface-state generation. It was also found that a deeper field oxide recess in narrow channel nMOSFETs leads to lesser hot-carrier degradation, which is possibly related to the reduced impact ionization rate in the channel.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/56220
ISSN: 00214922
Appears in Collections:Staff Publications

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