Horizontally directed growth of carbon nanotubes utilizing self-generated electric field from plasma induced surface charging

Abstract

Plasma induced surface charging during carbon nanotube (CNT) growth via radio frequency plasma-enhanced chemical vapor deposition is exploited to direct the growth in a horizontal direction on a device substrate without the need for external biasing arrangements. Using a silicon-on-insulator substrate, a pair of electrodes is fabricated in which one electrode is shorted to the handle layer and the other is left floating. A potential difference results from the plasma, and creates a lateral electric field between the electrodes that is used to direct the growth of CNTs. The approach allows for wafer-scale growth of laterally aligned CNTs. © 2007 American Institute of Physics.