Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2008.2005586
Title: High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering
Authors: Zang, H.
Lee, S. 
Yu, M.
Loh, W.Y.
Wang, J. 
Lo, G.-Q.
Kwong, D.-L.
Keywords: Dopant segregation
Metal-germanium-metal (MGM)
Photodetectors (PDs)
Schottky-contact
Si-waveguide
Issue Date: 1-Dec-2008
Citation: Zang, H., Lee, S., Yu, M., Loh, W.Y., Wang, J., Lo, G.-Q., Kwong, D.-L. (2008-12-01). High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineering. IEEE Photonics Technology Letters 20 (23) : 1965-1967. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2008.2005586
Abstract: In this letter, we present a high-speed metal-germanium-metal configured Ge-photodetectors (MGM-PDs) under photovoltaic mode (i.e., 0-V operation). The metal contacts are engineered by an asymmetrical (i.e., boron and arsenic) dopant-segregation scheme on Schottky-contacts to suppress the dark current, and are with scaled spacing (∼0.8 μm). The MGM-PD (with ∼300-nm-thick Ge) is integrated on a silicon-on-isolator waveguide with complementary metal-oxide-semiconductor field effect transistor compatible process. For λ = 1550 nm, under 0-V bias, the devices illustrate a reasonable responsivity ∼0.17 A/W and a fast pulse response of 18 ps. © 2008 IEEE.
Source Title: IEEE Photonics Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56210
ISSN: 10411135
DOI: 10.1109/LPT.2008.2005586
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