Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.jcrysgro.2004.04.100
DC Field | Value | |
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dc.title | High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer | |
dc.contributor.author | Miao, Z.L. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Tripathy, S. | |
dc.contributor.author | Chia, C.K. | |
dc.contributor.author | Chye, Y.H. | |
dc.contributor.author | Chen, P. | |
dc.date.accessioned | 2014-06-17T02:51:57Z | |
dc.date.available | 2014-06-17T02:51:57Z | |
dc.date.issued | 2004-07-15 | |
dc.identifier.citation | Miao, Z.L., Chua, S.J., Tripathy, S., Chia, C.K., Chye, Y.H., Chen, P. (2004-07-15). High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer. Journal of Crystal Growth 268 (1-2) : 18-23. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.100 | |
dc.identifier.issn | 00220248 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/56206 | |
dc.description.abstract | In this article, using an in situ micro-structured buffer, we report the growth of high-quality InAs epilayer on GaAs substrate by molecular beam epitaxy. Structural characterization of such InAs epilayer was carried out using cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), and depth-resolved channeling contrast microscopy (CCM). TEM and CCM images clearly show that the dislocations are trapped in the thin buffer layer between the InAs epilayer and the GaAs substrate interface. A narrow XRD peak from the InAs epilayer grown by this technique indicates good crystalline quality. In addition, the XRD peak position and the optical phonon peaks obtained from micro-Raman measurements confirm that the strain has been released in the InAs epilayer. © 2004 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2004.04.100 | |
dc.source | Scopus | |
dc.subject | A1. Low dimensional structures | |
dc.subject | A3. Molecular beam epitaxy | |
dc.subject | B2. Semiconducting III-V materials | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.jcrysgro.2004.04.100 | |
dc.description.sourcetitle | Journal of Crystal Growth | |
dc.description.volume | 268 | |
dc.description.issue | 1-2 | |
dc.description.page | 18-23 | |
dc.description.coden | JCRGA | |
dc.identifier.isiut | 000222714700004 | |
Appears in Collections: | Staff Publications |
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