Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.100
Title: High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer
Authors: Miao, Z.L.
Chua, S.J. 
Tripathy, S.
Chia, C.K.
Chye, Y.H.
Chen, P.
Keywords: A1. Low dimensional structures
A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
Issue Date: 15-Jul-2004
Source: Miao, Z.L., Chua, S.J., Tripathy, S., Chia, C.K., Chye, Y.H., Chen, P. (2004-07-15). High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer. Journal of Crystal Growth 268 (1-2) : 18-23. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.100
Abstract: In this article, using an in situ micro-structured buffer, we report the growth of high-quality InAs epilayer on GaAs substrate by molecular beam epitaxy. Structural characterization of such InAs epilayer was carried out using cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), and depth-resolved channeling contrast microscopy (CCM). TEM and CCM images clearly show that the dislocations are trapped in the thin buffer layer between the InAs epilayer and the GaAs substrate interface. A narrow XRD peak from the InAs epilayer grown by this technique indicates good crystalline quality. In addition, the XRD peak position and the optical phonon peaks obtained from micro-Raman measurements confirm that the strain has been released in the InAs epilayer. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/56206
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.04.100
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