Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0960-1317/19/1/015017
DC Field | Value | |
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dc.title | High-Q bulk-mode SOI square resonators with straight-beam anchors | |
dc.contributor.author | Khine, L. | |
dc.contributor.author | Palaniapan, M. | |
dc.date.accessioned | 2014-06-17T02:51:56Z | |
dc.date.available | 2014-06-17T02:51:56Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Khine, L., Palaniapan, M. (2009). High-Q bulk-mode SOI square resonators with straight-beam anchors. Journal of Micromechanics and Microengineering 19 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/19/1/015017 | |
dc.identifier.issn | 09601317 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/56205 | |
dc.description.abstract | In this paper, the performance of 6.35 MHz Lamé-mode square resonators with different dimensions of straight-beam anchor supports is presented, with quality factor values exceeding one million in ambient pressures as high as 150 Pa. A maximum Q value of 1.70 million was experimentally measured for some of the square resonators at a vacuum pressure of 36 νTorr. The Q values of square resonators were relatively independent of pressure at levels below 100 Pa, which suggests that Q is pressure limited due to air damping only when pressures become higher than 100 Pa. Dimensions of straight-beam anchors placed at the four corners of the square resonator lead to tradeoffs among achievable Q, power handling capabilities and motional resistance. Longer anchor beams generally provide good signal-to-noise performance of a square resonator at lower dc bias; however, the resonator goes into the nonlinear regime at lower ac-dc drive amplitudes, which means reduced power handling capability. The benefit of shorter anchors is that the resonator is able to operate in a linear mode under high drive conditions. Depending on the type of application, anchor dimensions can be chosen such that the resonator's performance is optimal in terms of a quality factor, motional resistance and power handling. The resonators were fabricated using the silicon-on-insulator multi-user MEMS process from MEMSCAP. © 2009 IOP Publishing Ltd. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1088/0960-1317/19/1/015017 | |
dc.description.sourcetitle | Journal of Micromechanics and Microengineering | |
dc.description.volume | 19 | |
dc.description.issue | 1 | |
dc.description.page | - | |
dc.description.coden | JMMIE | |
dc.identifier.isiut | 000262344300017 | |
Appears in Collections: | Staff Publications |
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