Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMTT.2003.815890
Title: High-performance microwave coplanar bandpass and bandstop filters on Si substrates
Authors: Chan, K.T.
Chin, A.
Li, M.-F. 
Kwong, D.-L.
McAlister, S.P.
Duh, D.S.
Lin, W.J.
Chang, C.Y.
Keywords: Bandpass
Bandstop
Filter
Integration
Millimeter wave
Si
Issue Date: Sep-2003
Citation: Chan, K.T., Chin, A., Li, M.-F., Kwong, D.-L., McAlister, S.P., Duh, D.S., Lin, W.J., Chang, C.Y. (2003-09). High-performance microwave coplanar bandpass and bandstop filters on Si substrates. IEEE Transactions on Microwave Theory and Techniques 51 (9) : 2036-2040. ScholarBank@NUS Repository. https://doi.org/10.1109/TMTT.2003.815890
Abstract: High-performance bandpass and bandstop microwave coplanar filters, which operate from 22 to 91 GHz, have been fabricated on Si substrates. This was achieved using an optimized proton implantation process that converts the standard low-resistivity (∼ 10 Ω · cm) Si to a semi-insulating state. The bandpass filters consist of coupled lines to form a series resonator, while the bandstop filter was designed in a double-folded short-end stub structure. For the bandpass filters at 40 and 91 GHz, low insertion loss was measured, close to electromagnetic simulation values. We also fabricated excellent bandstop filters with very low transmission loss of ∼ 1 dB and deep band rejection at both 22 and 50 GHz. The good filter performance was confirmed by the higher substrate impedance to ground, which was extracted from the well-matched S-parameter equivalent-circuit data.
Source Title: IEEE Transactions on Microwave Theory and Techniques
URI: http://scholarbank.nus.edu.sg/handle/10635/56203
ISSN: 00189480
DOI: 10.1109/TMTT.2003.815890
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