Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4765364
Title: High magnetoresistance in graphene nanoribbon heterojunction
Authors: Bala Kumar, S. 
Jalil, M.B.A. 
Tan, S.G.
Issue Date: 29-Oct-2012
Source: Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2012-10-29). High magnetoresistance in graphene nanoribbon heterojunction. Applied Physics Letters 101 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4765364
Abstract: We show a large magnetoresistance (MR) effect in a graphene heterostructure consisting of a metallic and semiconductor-type armchair-graphene-nanoribbon. In the heterostructure, the transmission across the first subband of the semiconducting armchair-graphene-nanoribbon and metallic armchair-graphene- nanoribbon is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-like effect, which distorts the wavefunctions. Thus, a finite transmission occurs across the heterojunction, giving rise to a large MR effect. We study the dependence of this MR on temperature and electron energy. Finally, we design a magnetic-field-effect-transistor which yields a MR of close to 100 (85) at low (room) temperature. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56189
ISSN: 00036951
DOI: 10.1063/1.4765364
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