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|Title:||High magnetoresistance in graphene nanoribbon heterojunction|
|Authors:||Bala Kumar, S. |
|Citation:||Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2012-10-29). High magnetoresistance in graphene nanoribbon heterojunction. Applied Physics Letters 101 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4765364|
|Abstract:||We show a large magnetoresistance (MR) effect in a graphene heterostructure consisting of a metallic and semiconductor-type armchair-graphene-nanoribbon. In the heterostructure, the transmission across the first subband of the semiconducting armchair-graphene-nanoribbon and metallic armchair-graphene- nanoribbon is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-like effect, which distorts the wavefunctions. Thus, a finite transmission occurs across the heterojunction, giving rise to a large MR effect. We study the dependence of this MR on temperature and electron energy. Finally, we design a magnetic-field-effect-transistor which yields a MR of close to 100 (85) at low (room) temperature. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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