Please use this identifier to cite or link to this item:
|Title:||High magnetoresistance in graphene nanoribbon heterojunction|
|Authors:||Bala Kumar, S. |
|Citation:||Bala Kumar, S., Jalil, M.B.A., Tan, S.G. (2012-10-29). High magnetoresistance in graphene nanoribbon heterojunction. Applied Physics Letters 101 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4765364|
|Abstract:||We show a large magnetoresistance (MR) effect in a graphene heterostructure consisting of a metallic and semiconductor-type armchair-graphene-nanoribbon. In the heterostructure, the transmission across the first subband of the semiconducting armchair-graphene-nanoribbon and metallic armchair-graphene- nanoribbon is forbidden under zero magnetic-field, due to the orthogonality of the wavefunctions. A finite magnetic-field introduces the quantum hall-like effect, which distorts the wavefunctions. Thus, a finite transmission occurs across the heterojunction, giving rise to a large MR effect. We study the dependence of this MR on temperature and electron energy. Finally, we design a magnetic-field-effect-transistor which yields a MR of close to 100 (85) at low (room) temperature. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 12, 2018
WEB OF SCIENCETM
checked on Dec 4, 2018
checked on Sep 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.