Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2913048
Title: High- k gate stack on germanium substrate with fluorine incorporation
Authors: Xie, R.
Yu, M.
Lai, M.Y.
Chan, L.
Zhu, C. 
Issue Date: 2008
Citation: Xie, R., Yu, M., Lai, M.Y., Chan, L., Zhu, C. (2008). High- k gate stack on germanium substrate with fluorine incorporation. Applied Physics Letters 92 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2913048
Abstract: In this letter, a postgate C F4 -plasma treatment is proposed and demonstrated on germanium (Ge) metal-oxide-semiconductor capacitors and the effects of fluorine (F) incorporation have been studied on both high- kGe gate stacks without any surface passivation and with Si surface passivation. Our results show that F is effectively introduced into the gate stack by C F4 treatment and segregates near high- kGe interface. Electrical characteristics such as frequency dispersion, interface state density (Dit), and gate leakage are improved after F incorporation. Interface quality of high- kGe gate stack is further improved by combining Si surface passivation and postgate C F4 treatment, with its Dit as low as 4.85× 1011 cm-2 eV-1. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56187
ISSN: 00036951
DOI: 10.1063/1.2913048
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

60
checked on May 20, 2018

WEB OF SCIENCETM
Citations

60
checked on Apr 16, 2018

Page view(s)

30
checked on May 5, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.