Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2913048
Title: High- k gate stack on germanium substrate with fluorine incorporation
Authors: Xie, R.
Yu, M.
Lai, M.Y.
Chan, L.
Zhu, C. 
Issue Date: 2008
Source: Xie, R.,Yu, M.,Lai, M.Y.,Chan, L.,Zhu, C. (2008). High- k gate stack on germanium substrate with fluorine incorporation. Applied Physics Letters 92 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2913048
Abstract: In this letter, a postgate C F4 -plasma treatment is proposed and demonstrated on germanium (Ge) metal-oxide-semiconductor capacitors and the effects of fluorine (F) incorporation have been studied on both high- kGe gate stacks without any surface passivation and with Si surface passivation. Our results show that F is effectively introduced into the gate stack by C F4 treatment and segregates near high- kGe interface. Electrical characteristics such as frequency dispersion, interface state density (Dit), and gate leakage are improved after F incorporation. Interface quality of high- kGe gate stack is further improved by combining Si surface passivation and postgate C F4 treatment, with its Dit as low as 4.85× 1011 cm-2 eV-1. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56187
ISSN: 00036951
DOI: 10.1063/1.2913048
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