Please use this identifier to cite or link to this item:
|Title:||High- k gate stack on germanium substrate with fluorine incorporation|
|Citation:||Xie, R., Yu, M., Lai, M.Y., Chan, L., Zhu, C. (2008). High- k gate stack on germanium substrate with fluorine incorporation. Applied Physics Letters 92 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2913048|
|Abstract:||In this letter, a postgate C F4 -plasma treatment is proposed and demonstrated on germanium (Ge) metal-oxide-semiconductor capacitors and the effects of fluorine (F) incorporation have been studied on both high- kGe gate stacks without any surface passivation and with Si surface passivation. Our results show that F is effectively introduced into the gate stack by C F4 treatment and segregates near high- kGe interface. Electrical characteristics such as frequency dispersion, interface state density (Dit), and gate leakage are improved after F incorporation. Interface quality of high- kGe gate stack is further improved by combining Si surface passivation and postgate C F4 treatment, with its Dit as low as 4.85× 1011 cm-2 eV-1. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 16, 2018
WEB OF SCIENCETM
checked on Jul 23, 2018
checked on Jun 30, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.