Please use this identifier to cite or link to this item:
|Title:||High carrier injection optical switch based on two-mode interference in SiGe alloy|
|Authors:||Li, B. |
|Citation:||Li, B., Chua, S.-J. (2002-01-14). High carrier injection optical switch based on two-mode interference in SiGe alloy. Applied Physics Letters 80 (2) : 180-182. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1432758|
|Abstract:||Based on the two-mode interference principle, the high carrier injection effect, and the free-carrier plasma dispersion effect, a directional coupling active optical switch in SiGe/Si alloy has been fabricated. Its insertion loss and crosstalk were measured to be 2.74 and -15.5 dB, respectively, at the wavelength of 1.3 μm and the total switching current of 110 mA. The fastest response time of the switch is up to 30 ns. © 2002 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 17, 2018
WEB OF SCIENCETM
checked on May 16, 2018
checked on Jun 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.