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|Title:||High carrier injection optical switch based on two-mode interference in SiGe alloy|
|Authors:||Li, B. |
|Source:||Li, B., Chua, S.-J. (2002-01-14). High carrier injection optical switch based on two-mode interference in SiGe alloy. Applied Physics Letters 80 (2) : 180-182. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1432758|
|Abstract:||Based on the two-mode interference principle, the high carrier injection effect, and the free-carrier plasma dispersion effect, a directional coupling active optical switch in SiGe/Si alloy has been fabricated. Its insertion loss and crosstalk were measured to be 2.74 and -15.5 dB, respectively, at the wavelength of 1.3 μm and the total switching current of 110 mA. The fastest response time of the switch is up to 30 ns. © 2002 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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