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https://doi.org/10.1063/1.1432758
Title: | High carrier injection optical switch based on two-mode interference in SiGe alloy | Authors: | Li, B. Chua, S.-J. |
Issue Date: | 14-Jan-2002 | Citation: | Li, B., Chua, S.-J. (2002-01-14). High carrier injection optical switch based on two-mode interference in SiGe alloy. Applied Physics Letters 80 (2) : 180-182. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1432758 | Abstract: | Based on the two-mode interference principle, the high carrier injection effect, and the free-carrier plasma dispersion effect, a directional coupling active optical switch in SiGe/Si alloy has been fabricated. Its insertion loss and crosstalk were measured to be 2.74 and -15.5 dB, respectively, at the wavelength of 1.3 μm and the total switching current of 110 mA. The fastest response time of the switch is up to 30 ns. © 2002 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/56186 | ISSN: | 00036951 | DOI: | 10.1063/1.1432758 |
Appears in Collections: | Staff Publications |
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