Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1432758
Title: High carrier injection optical switch based on two-mode interference in SiGe alloy
Authors: Li, B. 
Chua, S.-J. 
Issue Date: 14-Jan-2002
Citation: Li, B., Chua, S.-J. (2002-01-14). High carrier injection optical switch based on two-mode interference in SiGe alloy. Applied Physics Letters 80 (2) : 180-182. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1432758
Abstract: Based on the two-mode interference principle, the high carrier injection effect, and the free-carrier plasma dispersion effect, a directional coupling active optical switch in SiGe/Si alloy has been fabricated. Its insertion loss and crosstalk were measured to be 2.74 and -15.5 dB, respectively, at the wavelength of 1.3 μm and the total switching current of 110 mA. The fastest response time of the switch is up to 30 ns. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56186
ISSN: 00036951
DOI: 10.1063/1.1432758
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