Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2472275
Title: Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy
Authors: Liu, H.F.
Chua, S.J.
Xiang, N. 
Issue Date: 2007
Source: Liu, H.F., Chua, S.J., Xiang, N. (2007). Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy. Journal of Applied Physics 101 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2472275
Abstract: The authors investigated the growth of Al thin films on GaAs (100) substrates by molecular beam epitaxy. It is found that the growth at 550 °C results in a texture that consists of (100) Al [010] ∥ (100) GaAs [011] and (100) Al [010] ∥ (100) GaAs [010] rotated 45° with respect to each other, while the growth at 300 °C leads to a mixture phase of (100) Al [010] ∥ (100) GaAs [011] and (110) Al [001] ∥ (100) GaAs [0 1- 1-]. In situ annealing of the Al film grown at 300 °C causes a reorientation of the crystalline from (100) Al [010] ∥ (100) GaAs [011] to (110) Al [001] ∥ (100) GaAs [0 1- 1-]. The grain sizes of the Al film are increased by the increased growth temperature and in situ annealing; the ratio of the exposed to the covered surface is not changed significantly by changing the growth temperature but decreased by annealing; and the small islands in between the large ones are removed by annealing. These observations are explained based on island migration and coalescence. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56167
ISSN: 00218979
DOI: 10.1063/1.2472275
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