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|Title:||Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy|
|Citation:||Liu, H.F., Chua, S.J., Xiang, N. (2007). Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy. Journal of Applied Physics 101 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2472275|
|Abstract:||The authors investigated the growth of Al thin films on GaAs (100) substrates by molecular beam epitaxy. It is found that the growth at 550 °C results in a texture that consists of (100) Al  ∥ (100) GaAs  and (100) Al  ∥ (100) GaAs  rotated 45° with respect to each other, while the growth at 300 °C leads to a mixture phase of (100) Al  ∥ (100) GaAs  and (110) Al  ∥ (100) GaAs [0 1- 1-]. In situ annealing of the Al film grown at 300 °C causes a reorientation of the crystalline from (100) Al  ∥ (100) GaAs  to (110) Al  ∥ (100) GaAs [0 1- 1-]. The grain sizes of the Al film are increased by the increased growth temperature and in situ annealing; the ratio of the exposed to the covered surface is not changed significantly by changing the growth temperature but decreased by annealing; and the small islands in between the large ones are removed by annealing. These observations are explained based on island migration and coalescence. © 2007 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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