Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.112
Title: Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition
Authors: Hartono, H.
Chen, P.
Chua, S.J. 
Fitzgerald, E.A.
Keywords: Highly mismatched systems
InxGa1-xN layers
InN
Issue Date: 26-Mar-2007
Citation: Hartono, H., Chen, P., Chua, S.J., Fitzgerald, E.A. (2007-03-26). Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition. Thin Solid Films 515 (10) : 4408-4411. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.112
Abstract: InN has been successfully grown on GaN with a thin InGaN intermediate layer by metalorganic chemical vapor deposition. A pyramid growth was observed for the InN with lateral size of about 270 nm and thickness of about 70-75 nm. This InN contributes to the green emission of the subsequently grown InGaN layer despite the V-pits formation on the surface. The InGaN intermediate layer serves to reduce the lattice mismatch between InN and GaN. Earlier attempt to grow InN directly in GaN resulted in indium droplet formation only. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/56166
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.112
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