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|Title:||Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition|
|Keywords:||Highly mismatched systems|
|Citation:||Hartono, H., Chen, P., Chua, S.J., Fitzgerald, E.A. (2007-03-26). Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition. Thin Solid Films 515 (10) : 4408-4411. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.112|
|Abstract:||InN has been successfully grown on GaN with a thin InGaN intermediate layer by metalorganic chemical vapor deposition. A pyramid growth was observed for the InN with lateral size of about 270 nm and thickness of about 70-75 nm. This InN contributes to the green emission of the subsequently grown InGaN layer despite the V-pits formation on the surface. The InGaN intermediate layer serves to reduce the lattice mismatch between InN and GaN. Earlier attempt to grow InN directly in GaN resulted in indium droplet formation only. © 2006 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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