Please use this identifier to cite or link to this item:
|Title:||Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates|
|Source:||Chua, S.J.,Hao, M.,Zhang, J.,Sia, E.K. (2001-11). Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates. Physica Status Solidi (A) Applied Research 188 (1) : 421-424. ScholarBank@NUS Repository. https://doi.org/10.1002/1521-396X(200111)188:1<421|
|Abstract:||It was found that continuous GaN films could be grown on cracked Si-doped GaN templates. Plan-view and cross section micrographs showed that no cracks occurred in the top GaN layer although it was grown on a cracked Si-doped GaN layer. The continuous GaN films on the cracked Si-doped GaN have been characterized by X-ray diffraction and Raman spectroscopy. It was shown that the top GaN film is of high crystal quality. A good surface morphology has been proven by scanning electron microscopy observations. Transmission electron microscopy analysis showed that the screw and/or mixed dislocation density in the top GaN film has been greatly reduced. However, pure edge dislocation density in the film remains unchanged.|
|Source Title:||Physica Status Solidi (A) Applied Research|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 15, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.