Please use this identifier to cite or link to this item: https://doi.org/10.1002/1521-396X(200111)188:1<421
Title: Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates
Authors: Chua, S.J.
Hao, M.
Zhang, J. 
Sia, E.K.
Issue Date: Nov-2001
Source: Chua, S.J.,Hao, M.,Zhang, J.,Sia, E.K. (2001-11). Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates. Physica Status Solidi (A) Applied Research 188 (1) : 421-424. ScholarBank@NUS Repository. https://doi.org/10.1002/1521-396X(200111)188:1<421
Abstract: It was found that continuous GaN films could be grown on cracked Si-doped GaN templates. Plan-view and cross section micrographs showed that no cracks occurred in the top GaN layer although it was grown on a cracked Si-doped GaN layer. The continuous GaN films on the cracked Si-doped GaN have been characterized by X-ray diffraction and Raman spectroscopy. It was shown that the top GaN film is of high crystal quality. A good surface morphology has been proven by scanning electron microscopy observations. Transmission electron microscopy analysis showed that the screw and/or mixed dislocation density in the top GaN film has been greatly reduced. However, pure edge dislocation density in the film remains unchanged.
Source Title: Physica Status Solidi (A) Applied Research
URI: http://scholarbank.nus.edu.sg/handle/10635/56164
ISSN: 00318965
DOI: 10.1002/1521-396X(200111)188:1<421
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