Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.88.195429
Title: Giant magnetoresistance in single-layer graphene flakes with a gate-voltage-tunable weak antilocalization
Authors: Gopinadhan, K. 
Shin, Y.J.
Yudhistira, I.
Niu, J.
Yang, H. 
Issue Date: 25-Nov-2013
Source: Gopinadhan, K., Shin, Y.J., Yudhistira, I., Niu, J., Yang, H. (2013-11-25). Giant magnetoresistance in single-layer graphene flakes with a gate-voltage-tunable weak antilocalization. Physical Review B - Condensed Matter and Materials Physics 88 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.88.195429
Abstract: A clear gate-voltage-tunable weak antilocalization and a giant magnetoresistance of ∼400% are observed at 1.9 K in single-layer graphene with an out-of-plane field. A large magnetoresistance value of 275% is obtained even at room temperature, implying potential applications of graphene in magnetic sensors. Both the weak antilocalization and giant magnetoresistance persists far away from the charge neutrality point, in contrast to previous reports, and both effects originate from charged impurities. Interestingly, the signatures of Shubnikov-de Haas oscillations and the quantum Hall effect are also observed for the same sample. © 2013 American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56143
ISSN: 10980121
DOI: 10.1103/PhysRevB.88.195429
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