Please use this identifier to cite or link to this item: https://doi.org/19/195002
Title: Giant magnetoresistance effects on electromigration characteristics in spin valve read sensors during retrieving operation
Authors: Zeng, D.G.
Lee, K.-I.
Chung, K.-W.
Bae, S. 
Issue Date: 16-May-2012
Source: Zeng, D.G.,Lee, K.-I.,Chung, K.-W.,Bae, S. (2012-05-16). Giant magnetoresistance effects on electromigration characteristics in spin valve read sensors during retrieving operation. Journal of Physics D: Applied Physics 45 (19) : -. ScholarBank@NUS Repository. https://doi.org/19/195002
Abstract: Electromigration (EM) in giant magnetoresistance (GMR) spin valve read sensors under pulsed magnetic field of 50200Oe with different duty factors was experimentally studied to explore the physical mechanisms of EM failures during sensor retrieving operation. It was found that the GMR effect, which causes the temperature rise and fall due to the change in resistance, is dominantly responsible for the acceleration of EM failures at a small retrieving field (50Oe). A theoretical model incorporating the GMR and Hall effects was proposed to interpret the EM failure characteristics. The physical validity of this proposed model is confirmed by the comparisons with experimental results. © 2012 IOP Publishing Ltd.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56142
ISSN: 00223727
DOI: 19/195002
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