Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2013.2258924
Title: Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
Authors: Liu, B.
Gong, X.
Zhan, C.
Han, G. 
Chin, H.-C.
Ling, M.-L.
Li, J.
Liu, Y.
Hu, J.
Daval, N.
Veytizou, C.
Delprat, D.
Nguyen, B.-Y.
Yeo, Y.-C. 
Keywords: Fin doping
FinFETs
GeOI
Germanium
metal S/D
MuGFETs
oCD
Issue Date: 2013
Source: Liu, B.,Gong, X.,Zhan, C.,Han, G.,Chin, H.-C.,Ling, M.-L.,Li, J.,Liu, Y.,Hu, J.,Daval, N.,Veytizou, C.,Delprat, D.,Nguyen, B.-Y.,Yeo, Y.-C. (2013). Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate. IEEE Transactions on Electron Devices 60 (6) : 1852-1860. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2258924
Abstract: We demonstrate the integration of high performance p-channel Germanium Multiple-Gate Field-Effect Transistors (MuGFETs) on a Germanium-on-Insulator substrate. Detailed process conditions are documented in this paper. The effects of Ge fin doping concentration on the electrical performance of Ge MuGFETs are discussed, and this could be useful for further device optimization. It is found that a higher fin doping leads to better control of short-channel efforts of Ge MuGFETs but degrades the on-state current and transconductance. High on-state current for Ge MuGFETs is reported in this paper. © 1963-2012 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/56136
ISSN: 00189383
DOI: 10.1109/TED.2013.2258924
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