Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2013.2262135
Title: Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
Authors: Liu, B.
Zhan, C.
Yang, Y.
Cheng, R. 
Guo, P.
Zhou, Q. 
Kong, E.Y.-J.
Daval, N.
Veytizou, C.
Delprat, D.
Nguyen, B.-Y.
Yeo, Y.-C. 
Keywords: Germanium (Ge)
Germanium-on-Insulator (GeOI)
in situ dope
multiple-gate field-effect transistor (MuGFET)
raised source/drain (RSD)
Issue Date: 2013
Source: Liu, B., Zhan, C., Yang, Y., Cheng, R., Guo, P., Zhou, Q., Kong, E.Y.-J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2013). Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain. IEEE Transactions on Electron Devices 60 (7) : 2135-2141. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2262135
Abstract: We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron (B)-doped Ge (Ge:B) raised source/drain (RSD). Detailed process optimization on epitaxial growth of Ge on patterned GeOI samples is discussed. Process integration of Ge:B RSD into Ge MuGFETs using a CMOS compatible process flow is documented. Electrical characteristics of Ge MuGFETs with RSD are reported. © 1963-2012 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/56135
ISSN: 00189383
DOI: 10.1109/TED.2013.2262135
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