Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4712027
Title: Gate-controlled spin transport in a spin-diode structure
Authors: Li, Y.
Jalil, M.B.A. 
Ghee Tan, S. 
Issue Date: 1-May-2012
Source: Li, Y., Jalil, M.B.A., Ghee Tan, S. (2012-05-01). Gate-controlled spin transport in a spin-diode structure. Journal of Applied Physics 111 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4712027
Abstract: We investigate the spin transport in a spin-diode structure consisting of a quantum dot (QD) coupled to a ferromagnetic lead and a nonmagnetic (NM) lead. Electron transport through the QD system is investigated theoretically by means of the nonequilibrium Keldysh Green's function technique. The presence of a spin bias in the NM lead induces a charge current, which shows an asymmetric spoon-like current-bias characteristic. The spoon-like profile can be suppressed by tuning the energy level of the QD via the gate voltage. The maximum spin-bias-induced current occurs when the tunnel couplings across the left and the right tunnel barriers are close to each other for spin-up or spin-down electrons. The effect of the tunnel couplings can thus be utilized in the design of spin-diode structures. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56115
ISSN: 00218979
DOI: 10.1063/1.4712027
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