Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2171827
Title: Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications
Authors: Lim, A.E.-J.
Lee, R.T.P. 
Tung, C.H.
Tripathy, S.
Kwong, D.-L.
Yeo, Y.-C. 
Issue Date: Apr-2006
Source: Lim, A.E.-J., Lee, R.T.P., Tung, C.H., Tripathy, S., Kwong, D.-L., Yeo, Y.-C. (2006-04). Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications. Journal of the Electrochemical Society 153 (4) : G337-G340. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2171827
Abstract: The full silicidation of silicon gate electrodes using Ni-Tb alloy was investigated for metal oxide semiconductor field effect transistor (MOSFET) applications. Results showed that a dual-layer silicide gate consisting of a top NiTb silicide layer and a bottom NiSi layer was formed. Full silicidation using Ni0.8 Tb0.2 resulted in a gate work function of 4.41 eV. This is lower than a work function of 4.68 eV obtained from full Ni silicidation. The work function lowering was linked to structural changes in the underlying NiSi layer. No physical or electrical degradation was observed after forming gas annealing at 420°C for 30 min. NiTb-silicided gate electrodes have work functions suitable for application in advanced transistor structures. © 2006 The Electrochemical Society. All rights reserved.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/56098
ISSN: 00134651
DOI: 10.1149/1.2171827
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