Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3690941
Title: Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature
Authors: Liu, Z.Q.
Chim, W.K. 
Chiam, S.Y.
Pan, J.S.
Ng, C.M.
Issue Date: 27-Feb-2012
Source: Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2012-02-27). Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature. Applied Physics Letters 100 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690941
Abstract: Understanding interfacial phenomena is crucial for precise control in the growth of materials for advanced semiconductor devices. A systematic in situ coverage dependent study is conducted to study the Schottky barrier evolution and chemical reactions at the yttrium/germanium interface. Adatom-induced band bending is present in the early growth stages while metal-induced gap states resulted in strong Fermi level pinning at larger yttrium (Y) thicknesses. Furthermore, significant intermixing occurs at 3 Å thickness of Y and saturates at 17Å of Y. The underlying mechanism behind this self-limiting intermixing is well-described by a combination of chemical bond and metal-induced weakening theories. The implications of our findings on device performance are discussed. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56083
ISSN: 00036951
DOI: 10.1063/1.3690941
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Dec 7, 2017

WEB OF SCIENCETM
Citations

2
checked on Nov 22, 2017

Page view(s)

21
checked on Dec 11, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.