Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3690941
Title: Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature
Authors: Liu, Z.Q.
Chim, W.K. 
Chiam, S.Y.
Pan, J.S.
Ng, C.M.
Issue Date: 27-Feb-2012
Citation: Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2012-02-27). Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature. Applied Physics Letters 100 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690941
Abstract: Understanding interfacial phenomena is crucial for precise control in the growth of materials for advanced semiconductor devices. A systematic in situ coverage dependent study is conducted to study the Schottky barrier evolution and chemical reactions at the yttrium/germanium interface. Adatom-induced band bending is present in the early growth stages while metal-induced gap states resulted in strong Fermi level pinning at larger yttrium (Y) thicknesses. Furthermore, significant intermixing occurs at 3 Å thickness of Y and saturates at 17Å of Y. The underlying mechanism behind this self-limiting intermixing is well-described by a combination of chemical bond and metal-induced weakening theories. The implications of our findings on device performance are discussed. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56083
ISSN: 00036951
DOI: 10.1063/1.3690941
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