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|Title:||Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature|
|Citation:||Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2012-02-27). Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature. Applied Physics Letters 100 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690941|
|Abstract:||Understanding interfacial phenomena is crucial for precise control in the growth of materials for advanced semiconductor devices. A systematic in situ coverage dependent study is conducted to study the Schottky barrier evolution and chemical reactions at the yttrium/germanium interface. Adatom-induced band bending is present in the early growth stages while metal-induced gap states resulted in strong Fermi level pinning at larger yttrium (Y) thicknesses. Furthermore, significant intermixing occurs at 3 Å thickness of Y and saturates at 17Å of Y. The underlying mechanism behind this self-limiting intermixing is well-described by a combination of chemical bond and metal-induced weakening theories. The implications of our findings on device performance are discussed. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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