Please use this identifier to cite or link to this item:
|Title:||Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions|
|Authors:||Yeo, Y.-C. |
|Source:||Yeo, Y.-C., Sun, J. (2005-01-10). Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions. Applied Physics Letters 86 (2) : 023103-1. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1846152|
|Abstract:||The strain field in the silicon channel of a metal-oxide-semiconductor transistor with silicon-germanium (Si1-y Gey) source and drain regions was evaluated using a finite-element method. The physical origin of the vertical and lateral strain components in the transistor channel region was explained. The magnitude and distribution of the strain components, and their dependence on device design parameters such as the spacing L between the Si1-y Gey stressors and the Ge mole fraction y in the stressors were investigated. Reducing the interstressor spacing L or increasing the Ge mole fraction y in the stressors increases the magnitude of the vertical tensile strain and the lateral compressive strain in the portion of the channel region where the inversion charge resides. This is beneficial for improving the hole mobility in p -channel metal-oxide-semiconductor transistors. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 16, 2018
WEB OF SCIENCETM
checked on Nov 29, 2017
checked on Jan 13, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.