Please use this identifier to cite or link to this item: https://doi.org/10.1021/cm101121c
Title: Fabrication of silicon nanowires with precise diameter control using metal nanodot arrays as a hard mask blocking material in chemical etching
Authors: Huang, J.
Chiam, S.Y.
Tan, H.H.
Wang, S.
Chim, W.K. 
Issue Date: 13-Jul-2010
Source: Huang, J., Chiam, S.Y., Tan, H.H., Wang, S., Chim, W.K. (2010-07-13). Fabrication of silicon nanowires with precise diameter control using metal nanodot arrays as a hard mask blocking material in chemical etching. Chemistry of Materials 22 (13) : 4111-4116. ScholarBank@NUS Repository. https://doi.org/10.1021/cm101121c
Abstract: We report on a simple and cost-effective method to fabricate high density silicon nanowires (SiNWs) through catalytic chemical wet etching. Metallic chromium/gold (Cr/Au) nanodots were first deposited onto the silicon wafer using an anodic aluminum oxide (AAO) template. The AAO template was then removed before a thin blanket layer of gold catalyst was evaporated onto the sample surface. The gold-assisted chemical wet etching was carried out in a solution consisting of deionized water, hydrogen peroxide, and hydrofluoric acid to produce well-aligned silicon nanowires of uniform diameters. We demonstrate that the diameter of the silicon nanowires can be precisely controlled to a precision of 10 nm in the range of 40 to 80 nm through fine-tuning of the pore diameter of theAAO template. The reported fabrication procedure therefore gives a highly repeatable method to form well-aligned, uniform, and crystalline SiNWs of high density with controllable diameters below 100 nm. The use of Cr/Au as a hard mask blocking material will also be of great interest for the fabrication of other Si nanostructures using the catalytic etching process. © 2010 American Chemical Society.
Source Title: Chemistry of Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/55991
ISSN: 08974756
DOI: 10.1021/cm101121c
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