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|Title:||Fabrication of silicon nanowires with precise diameter control using metal nanodot arrays as a hard mask blocking material in chemical etching|
|Citation:||Huang, J., Chiam, S.Y., Tan, H.H., Wang, S., Chim, W.K. (2010-07-13). Fabrication of silicon nanowires with precise diameter control using metal nanodot arrays as a hard mask blocking material in chemical etching. Chemistry of Materials 22 (13) : 4111-4116. ScholarBank@NUS Repository. https://doi.org/10.1021/cm101121c|
|Abstract:||We report on a simple and cost-effective method to fabricate high density silicon nanowires (SiNWs) through catalytic chemical wet etching. Metallic chromium/gold (Cr/Au) nanodots were first deposited onto the silicon wafer using an anodic aluminum oxide (AAO) template. The AAO template was then removed before a thin blanket layer of gold catalyst was evaporated onto the sample surface. The gold-assisted chemical wet etching was carried out in a solution consisting of deionized water, hydrogen peroxide, and hydrofluoric acid to produce well-aligned silicon nanowires of uniform diameters. We demonstrate that the diameter of the silicon nanowires can be precisely controlled to a precision of 10 nm in the range of 40 to 80 nm through fine-tuning of the pore diameter of theAAO template. The reported fabrication procedure therefore gives a highly repeatable method to form well-aligned, uniform, and crystalline SiNWs of high density with controllable diameters below 100 nm. The use of Cr/Au as a hard mask blocking material will also be of great interest for the fabrication of other Si nanostructures using the catalytic etching process. © 2010 American Chemical Society.|
|Source Title:||Chemistry of Materials|
|Appears in Collections:||Staff Publications|
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