Please use this identifier to cite or link to this item:
|Title:||Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition|
|Authors:||Zhu, M. |
|Source:||Zhu, M., Chin, H.-C., Samudra, G.S., Yeo, Y.-C. (2008). Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition. Journal of the Electrochemical Society 155 (2) : H76-H79. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2811859|
|Abstract:||We demonstrate a p-MOSFET fabricated on GeGaAs heterostructure. The Ge layer was epitaxially grown on GaAs substrate by high vacuum chemical vapor deposition. High-quality single crystalline Ge film confirmed by X-ray diffraction and transmission electron microscopy was achieved with a very low root-mean-square roughness of 5 Å measured by atomic force microscopy. Secondary ion mass spectrometry results indicate that no Ga and As out-diffusion to Ge epi layer can be observed. By employing silane passivation, Ge p-MOSFET with TaN HfO2 gate stack was fabricated on GeGaAs heterostructure. The resultant transistor exhibited excellent subthreshold swing of 86 mVdec and Ion Ioff ratio greater than four orders. Additionally, ∼1.7 times hole mobility enhancement over the universal curve of Si was achieved. © 2007 The Electrochemical Society.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2017
WEB OF SCIENCETM
checked on Nov 23, 2017
checked on Dec 11, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.