Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2811859
Title: Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition
Authors: Zhu, M. 
Chin, H.-C.
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 2008
Source: Zhu, M., Chin, H.-C., Samudra, G.S., Yeo, Y.-C. (2008). Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition. Journal of the Electrochemical Society 155 (2) : H76-H79. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2811859
Abstract: We demonstrate a p-MOSFET fabricated on GeGaAs heterostructure. The Ge layer was epitaxially grown on GaAs substrate by high vacuum chemical vapor deposition. High-quality single crystalline Ge film confirmed by X-ray diffraction and transmission electron microscopy was achieved with a very low root-mean-square roughness of 5 Å measured by atomic force microscopy. Secondary ion mass spectrometry results indicate that no Ga and As out-diffusion to Ge epi layer can be observed. By employing silane passivation, Ge p-MOSFET with TaN HfO2 gate stack was fabricated on GeGaAs heterostructure. The resultant transistor exhibited excellent subthreshold swing of 86 mVdec and Ion Ioff ratio greater than four orders. Additionally, ∼1.7 times hole mobility enhancement over the universal curve of Si was achieved. © 2007 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/55989
ISSN: 00134651
DOI: 10.1149/1.2811859
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