Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-003-2372-5
Title: Exposure of defects in GaN by plasma etching
Authors: Choi, H.W.
Liu, C.
Cheong, M.G.
Zhang, J. 
Chua, S.J. 
Issue Date: Feb-2005
Source: Choi, H.W., Liu, C., Cheong, M.G., Zhang, J., Chua, S.J. (2005-02). Exposure of defects in GaN by plasma etching. Applied Physics A: Materials Science and Processing 80 (2) : 405-407. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-003-2372-5
Abstract: The effect of plasma exposure to n-type GaN surfaces has been examined. Etch pits are formed as a result of preferential sputtering at the sites of threading dislocations. Dark spots which are visible before plasma exposure can be attributed to screw dislocations, while those that emerge after plasma exposure are edge dislocations. The optimum condition for revealing defects clearly is derived, and has been adopted for the study of dislocations in a series of GaN epilayers grown under different conditions. A distinct trend in the dislocation density can be observed as the dopant concentration of the film varies.
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/55970
ISSN: 09478396
DOI: 10.1007/s00339-003-2372-5
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