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Title: Experimental characterization of on-chip inductor and capacitor interconnect: Part II. Shunt case
Authors: Yin, W.Y. 
Li, L.W. 
Pan, S.J.
Gan, Y.B. 
Keywords: Circuit model
First and second resonance frequencies
On-chip shunt LC interconnect
S parameter
Issue Date: May-2004
Source: Yin, W.Y., Li, L.W., Pan, S.J., Gan, Y.B. (2004-05). Experimental characterization of on-chip inductor and capacitor interconnect: Part II. Shunt case. IEEE Transactions on Magnetics 40 (3) : 1657-1663. ScholarBank@NUS Repository.
Abstract: We present a wide-band experimental characterization of an on-chip shunt inductor and capacitor (LC) interconnect. (A previous paper by the authors considered the series LC case). In order to capture the effects of parasitic parameters on the wide-band transmission and reflection characteristics of shunt LC interconnects, we propose a generalized frequency-independent circuit model for fast-running simulations. The model is accurate to above its second resonant frequency, with low average simulation errors for both reflection and transmission coefficients compared to the measured two-port S parameters over the frequency range of 1 to 14 GHz.
Source Title: IEEE Transactions on Magnetics
ISSN: 00189464
DOI: 10.1109/TMAG.2004.826627
Appears in Collections:Staff Publications

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