Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2011.04.013
Title: Examining the transparency of gallium-doped zinc oxide for photovoltaic applications
Authors: Wong, L.M.
Chiam, S.Y.
Huang, J.Q.
Wang, S.J.
Chim, W.K. 
Pan, J.S.
Keywords: Band gap
Gallium zinc oxide
Optical properties
Oxygen pressure
Transparency index
Issue Date: Aug-2011
Citation: Wong, L.M., Chiam, S.Y., Huang, J.Q., Wang, S.J., Chim, W.K., Pan, J.S. (2011-08). Examining the transparency of gallium-doped zinc oxide for photovoltaic applications. Solar Energy Materials and Solar Cells 95 (8) : 2400-2406. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2011.04.013
Abstract: In this work, we examine the optical properties of gallium-doped ZnO (GZO) thin films grown by pulsed laser deposition with varying oxygen pressures and substrate temperatures. In analyzing the optical properties of the thin films, we use a normalized transparency index that is directed at quantifying the transmission for usage as electrodes in photovoltaic devices. With this, we can clearly show the influence of oxygen on the transmission for different wavelengths. This allows us to clearly dissect the influence of band gap, oxygen pressure and carrier concentration on transparency. We achieved GZO films with a transparency index of 0.84 at room temperature and an improved index of 0.92 (92% of total solar spectrum transmitted) at a substrate temperature of 500 °C. The room temperature films, in particular, showed excellent transparency and conductivity, which are useful for use as electrodes in organic devices. © 2011 Elsevier B.V.
Source Title: Solar Energy Materials and Solar Cells
URI: http://scholarbank.nus.edu.sg/handle/10635/55945
ISSN: 09270248
DOI: 10.1016/j.solmat.2011.04.013
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