Please use this identifier to cite or link to this item:
|Title:||Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell|
|Authors:||Pu, J. |
|Source:||Pu, J., Kim, S.-J., Kim, Y.-S., Cho, B.J. (2008). Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell. Electrochemical and Solid-State Letters 11 (9) : H252-H254. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2945877|
|Abstract:||A rare-earth oxide, Gd2 O3, is evaluated for the application of the blocking layer in polysilicon-oxide-silicon nitride-oxide-silicon-type flash memory cell devices because of its high conduction-band offset and reasonably large κ value. In a Gd2 O3 Si3 N4 SiO2 dielectric stack, a monoclinic-structured Gd2 O3 shows the advantage of faster program/erase speed with comparable charge retention when compared to a conventional Al2 O3 blocking layer. Such performance makes Gd2 O3 a promising high- κ material for the blocking layer in charge-trap flash memory devices. © 2008 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 6, 2017
WEB OF SCIENCETM
checked on Nov 21, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.