Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3664134
Title: Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence
Authors: Peloso, M.P.
Sern Lew, J.
Trupke, T.
Peters, M.
Utama, R.
Aberle, A.G. 
Issue Date: 28-Nov-2011
Source: Peloso, M.P., Sern Lew, J., Trupke, T., Peters, M., Utama, R., Aberle, A.G. (2011-11-28). Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence. Applied Physics Letters 99 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3664134
Abstract: A line-imaging spectrometer is used to collect the spectrum of electroluminescence at each point of a multicrystalline silicon wafer solar cell. Characterization of the diffusion lengths of minority charge carriers is developed using a specific feature of the luminescence spectral signature. It is shown that various material and device parameters affecting the luminescence spectral signature may be determined independently. Diffusion length images derived from the proposed hyperspectral method are assessed against diffusion lengths obtained by light beam induced current measurements. Using hyperspectral imaging, diffusion lengths of minority charge carriers in a silicon wafer solar cell can be determined. © 2011 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55914
ISSN: 00036951
DOI: 10.1063/1.3664134
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