Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2731332
Title: Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser deposition
Authors: Liu, C.
Chor, E.F. 
Tan, L.S. 
Du, A.
Issue Date: 2007
Source: Liu, C., Chor, E.F., Tan, L.S., Du, A. (2007). Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser deposition. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (3) : 754-759. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2731332
Abstract: The authors have demonstrated the epitaxial growth of Sc2 O3 films on GaN (0001) using pulsed laser deposition (PLD) (with KrF excimer laser). The characteristics of these Sc2 O3 films were found to be highly dependent on the substrate temperature (Ts) and the oxygen partial pressure (P) during the PLD process. Under optimized deposition conditions (Ts of 700 °C and Po of 10 mTorr), highly c -axis oriented Sc2 O3 films have been epitaxially grown on GaN (0001) template with fine film crystallinity, smooth surface morphology, good film stoichiometry, and a refractive index close to that of the bulk material. Cross-sectional transmission electron microscopy measurements confirmed the heteroepitaxial nature of the Sc2 O3 films on the GaN template and revealed an epitaxial relationship of [112] Sc2 O3 ∥ [21 3- 0]GaN and (222) Sc2 O3 ∥ (0002)GaN. © 2007 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/55902
ISSN: 10711023
DOI: 10.1116/1.2731332
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

7
checked on Nov 21, 2017

Page view(s)

21
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.