Please use this identifier to cite or link to this item:
|Title:||Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser deposition|
|Source:||Liu, C., Chor, E.F., Tan, L.S., Du, A. (2007). Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser deposition. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (3) : 754-759. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2731332|
|Abstract:||The authors have demonstrated the epitaxial growth of Sc2 O3 films on GaN (0001) using pulsed laser deposition (PLD) (with KrF excimer laser). The characteristics of these Sc2 O3 films were found to be highly dependent on the substrate temperature (Ts) and the oxygen partial pressure (P) during the PLD process. Under optimized deposition conditions (Ts of 700 °C and Po of 10 mTorr), highly c -axis oriented Sc2 O3 films have been epitaxially grown on GaN (0001) template with fine film crystallinity, smooth surface morphology, good film stoichiometry, and a refractive index close to that of the bulk material. Cross-sectional transmission electron microscopy measurements confirmed the heteroepitaxial nature of the Sc2 O3 films on the GaN template and revealed an epitaxial relationship of  Sc2 O3 ∥ [21 3- 0]GaN and (222) Sc2 O3 ∥ (0002)GaN. © 2007 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 7, 2018
WEB OF SCIENCETM
checked on Jan 30, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.