Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3055271
Title: Enhanced magneto-Coulomb effect in asymmetric ferromagnetic single electron transistors
Authors: Jalil, M.B.A. 
Tan, S.G.
Ma, M.J. 
Issue Date: 2009
Source: Jalil, M.B.A., Tan, S.G., Ma, M.J. (2009). Enhanced magneto-Coulomb effect in asymmetric ferromagnetic single electron transistors. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3055271
Abstract: We investigate the magneto-Coulomb (MC) effect in a ferromagnetic single electron tunneling transistor (FM-SETT), with asymmetric junction resistances and FM electrodes. The MC effect enables the conductance of the FM-SETT by an applied magnetic B -field in addition to the usual gate-bias modulation. Under optimal biasing of the asymmetric FM-SETT near the sawtooth edge of its gate oscillation, the sensitivity γB =dIdB can be enhanced by a factor α, where α= R1 R2 denotes the junction resistance asymmetry. The enhanced B -field modulation is, however, susceptible to thermal smearing effects. Finally, an asymmetry in the magnetic properties of the FM leads results in a complex magnetoconductance response, with distinct conductance states. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55885
ISSN: 00218979
DOI: 10.1063/1.3055271
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