Please use this identifier to cite or link to this item:
|Title:||Enhanced magneto-Coulomb effect in asymmetric ferromagnetic single electron transistors|
|Authors:||Jalil, M.B.A. |
|Citation:||Jalil, M.B.A., Tan, S.G., Ma, M.J. (2009). Enhanced magneto-Coulomb effect in asymmetric ferromagnetic single electron transistors. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3055271|
|Abstract:||We investigate the magneto-Coulomb (MC) effect in a ferromagnetic single electron tunneling transistor (FM-SETT), with asymmetric junction resistances and FM electrodes. The MC effect enables the conductance of the FM-SETT by an applied magnetic B -field in addition to the usual gate-bias modulation. Under optimal biasing of the asymmetric FM-SETT near the sawtooth edge of its gate oscillation, the sensitivity γB =dIdB can be enhanced by a factor α, where α= R1 R2 denotes the junction resistance asymmetry. The enhanced B -field modulation is, however, susceptible to thermal smearing effects. Finally, an asymmetry in the magnetic properties of the FM leads results in a complex magnetoconductance response, with distinct conductance states. © 2009 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 20, 2018
WEB OF SCIENCETM
checked on Nov 13, 2018
checked on Nov 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.