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|Title:||Energy-band alignments of Hf O2 on p-GaAs substrates|
|Citation:||Dalapati, G.K., Oh, H.-J., Lee, S.J., Sridhara, A., Wong, A.S.W., Chi, D. (2008). Energy-band alignments of Hf O2 on p-GaAs substrates. Applied Physics Letters 92 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2839406|
|Abstract:||Interfacial reaction and the energy-band alignments of Hf O2 films on p-GaAs substrate were investigated by using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been demonstrated that the alloying of Hf O2 with Al2 O3 (HfAlO) can significantly reduce native oxides formation and increases the valence-band offsets (VBOs) at Hf O2 p-GaAs interface. In addition, the effects of Si interfacial passivation layer on band alignments have also been studied. VBO at Hf O2 p-GaAs, HfAlOp-GaAs, and Hf O2 Sip-GaAs interfaces were 2.85, 2.98, and 3.07 eV, respectively. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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