Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2839406
Title: Energy-band alignments of Hf O2 on p-GaAs substrates
Authors: Dalapati, G.K.
Oh, H.-J. 
Lee, S.J. 
Sridhara, A.
Wong, A.S.W.
Chi, D.
Issue Date: 2008
Source: Dalapati, G.K., Oh, H.-J., Lee, S.J., Sridhara, A., Wong, A.S.W., Chi, D. (2008). Energy-band alignments of Hf O2 on p-GaAs substrates. Applied Physics Letters 92 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2839406
Abstract: Interfacial reaction and the energy-band alignments of Hf O2 films on p-GaAs substrate were investigated by using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been demonstrated that the alloying of Hf O2 with Al2 O3 (HfAlO) can significantly reduce native oxides formation and increases the valence-band offsets (VBOs) at Hf O2 p-GaAs interface. In addition, the effects of Si interfacial passivation layer on band alignments have also been studied. VBO at Hf O2 p-GaAs, HfAlOp-GaAs, and Hf O2 Sip-GaAs interfaces were 2.85, 2.98, and 3.07 eV, respectively. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55874
ISSN: 00036951
DOI: 10.1063/1.2839406
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