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|Title:||Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility|
|Citation:||Xie, R., Wu, N., Shen, C., Zhu, C. (2008). Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility. Applied Physics Letters 93 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2976632|
|Abstract:||The energy distribution of interface trap density (Dit) in HfO2 gated germanium metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated by using charge pumping method with variable rise/fall-time measurement. Our results reveal that a high density of interface traps is present in the upper half of the Ge bandgap. As a result, the inversion-layer electron mobility of Ge n -channel MOSFETs was significantly degraded by the Coulomb scatterings. These results are also consistent with the abnormal capacitance-voltage (C-V) characteristics of Ge MOS capacitors. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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