Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.49.04DD16
Title: Elevated-confined phase-change random access memory cells
Authors: Koon, L.H.
Luping, S.
Rong, Z.
Hongxin, Y.
Guan, L.K.
Jianming, L.
Chong, C.T. 
Issue Date: Apr-2010
Source: Koon, L.H., Luping, S., Rong, Z., Hongxin, Y., Guan, L.K., Jianming, L., Chong, C.T. (2010-04). Elevated-confined phase-change random access memory cells. Japanese Journal of Applied Physics 49 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.04DD16
Abstract: A new elevated-confined phase-change random access memory (PCRAM) cell structure to reduce power consumption was proposed. In this proposed structure, the confined phase-change region is sitting on top of a small metal column enclosed by a dielectric at the sides. Hence, more heat can be effectively sustained underneath the phase-change region. As for the conventional structure, the confined phase-change region is sitting directly above a large planar bottom metal electrode, which can easily conduct most of the induced heat away. From simulations, a more uniform temperature profile around the active region and a higher peak temperature at the phase-change layer (PCL) in an elevated-confined structure were observed. Experimental results showed that the elevated-confined PCRAM cell requires a lower programming power and has a better scalability than a conventional confined PCRAM cell. © 2010 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55859
ISSN: 00214922
DOI: 10.1143/JJAP.49.04DD16
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