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|Title:||Electrical transport properties of ultrathin metallic films|
|Citation:||Tay, M., Li, K., Wu, Y. (2005). Electrical transport properties of ultrathin metallic films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (4) : 1412-1416. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1935527|
|Abstract:||Ultrathin metal films of Al, Au, Cr, Cu, Ru, Ta, Co90 Fe10, Ni81 Fe19, Ir20 Mn80 with or without capping layers have been prepared using ultrahigh vacuum sputtering and their morphological and electrical properties have been studied using atomic force microscopy and four-point probe measurement, respectively. It was found that the capping layer could either enhance or reduce the conductivity, depending on the capping layer thickness and surface roughness of the underlying film. The study of magnetoresistance (MR) dependence on capping and free layer thickness is also carried out on a pseudo spin valve. © 2005 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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