Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4754425
Title: Electrical modulation of the edge channel transport in topological insulators coupled to ferromagnetic leads
Authors: Li, Y.
Jalil, M.B.A. 
Ghee Tan, S. 
Zhou, G.
Issue Date: 15-Sep-2012
Source: Li, Y., Jalil, M.B.A., Ghee Tan, S., Zhou, G. (2012-09-15). Electrical modulation of the edge channel transport in topological insulators coupled to ferromagnetic leads. Journal of Applied Physics 112 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4754425
Abstract: The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads. The application of a side-gate voltage induces a constriction or quantum point contact (QPC) which couples the two edge channels. The transport properties of the system are calculated via the Keldysh nonequilibrium Greens function method. We found that inter-edge spin-flip coupling can significantly enhance (suppress) the charge current when the magnetization of the leads are anti-parallel (parallel) to one another. On the other hand, spin-conserving inter-edge coupling generally reduces the current by backscattering regardless of the magnetization configuration. The charge current and the conductance as a function of the bias voltage, also exhibit similar trends with respect to spin-flip coupling strength, for both parallel and anti-parallel configurations. Hence, gate voltage modulation of edge states via a QPC can provide a means of modulating the spin or charge current flow in TI-based spintronics devices. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55819
ISSN: 00218979
DOI: 10.1063/1.4754425
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