Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.024
Title: Electrical evaluation of laser annealed junctions by Hall measurements
Authors: Poon, C.H.
Tan, L.S. 
Cho, B.J. 
Ng, K.T.
Bhat, M.
Chan, L.
Keywords: Hall measurements
Laser annealing
Silicon
Issue Date: Sep-2004
Source: Poon, C.H., Tan, L.S., Cho, B.J., Ng, K.T., Bhat, M., Chan, L. (2004-09). Electrical evaluation of laser annealed junctions by Hall measurements. Thin Solid Films 462-463 (SPEC. ISS.) : 72-75. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.024
Abstract: Hall measurements performed on laser annealed ultrashallow ion implanted p-type layers on n-type substrates over a wide temperature range showed expected p-type characteristics at low temperature but unexpected n-type behaviour at higher temperature. Samples annealed with lower laser energy fluences displayed the unexpected n-type characteristics over a wider temperature range compared to those annealed at higher energy fluences. These results can be explained by the increased contribution of the n-type substrate to the Hall readings, made possible by a more leaky junction, when the implant damage is inadequately removed. Thus, Hall measurements can be proposed as a quick evaluation tool of the integrity of laser annealed junctions without the need of device fabrication or high-resolution transmission electron microscopy. © 2004 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/55818
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.024
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