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|Title:||Electrical evaluation of laser annealed junctions by Hall measurements|
|Citation:||Poon, C.H., Tan, L.S., Cho, B.J., Ng, K.T., Bhat, M., Chan, L. (2004-09). Electrical evaluation of laser annealed junctions by Hall measurements. Thin Solid Films 462-463 (SPEC. ISS.) : 72-75. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.024|
|Abstract:||Hall measurements performed on laser annealed ultrashallow ion implanted p-type layers on n-type substrates over a wide temperature range showed expected p-type characteristics at low temperature but unexpected n-type behaviour at higher temperature. Samples annealed with lower laser energy fluences displayed the unexpected n-type characteristics over a wider temperature range compared to those annealed at higher energy fluences. These results can be explained by the increased contribution of the n-type substrate to the Hall readings, made possible by a more leaky junction, when the implant damage is inadequately removed. Thus, Hall measurements can be proposed as a quick evaluation tool of the integrity of laser annealed junctions without the need of device fabrication or high-resolution transmission electron microscopy. © 2004 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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