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|Title:||Electrical and proximity-magnetic effects induced quantum Goos-Hänchen shift on the surface of topological insulator|
Quantum Goos-Hänchen shift
|Citation:||Kuai, J., Da, H.X. (2014-03). Electrical and proximity-magnetic effects induced quantum Goos-Hänchen shift on the surface of topological insulator. Journal of Magnetism and Magnetic Materials 354 : 355-358. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2013.11.044|
|Abstract:||We use scattering matrix method to theoretically demonstrate that the quantum Goos-Hänchen shift of the surface on three-dimensional topological insulator coated by ferromagnetic strips is sensitive to the magnitude of ferromagnetic magnetization. The dependence of quantum Goos-Hänchen shift on magnetization and gate bias is investigated by performing station phase approach. It is found that quantum Goos-Hänchen shift is positive and large under the magnetic barrier but may be positive as well as negative values under the gate bias. Furthermore, the position of quantum Goos-Hänchen peak can also be modulated by the combination of gate bias and proximity magnetic effects. Our results indicate that topological insulators are another candidates to support quantum Goos-Hänchen shift. © 2013 Elsevier B.V.|
|Source Title:||Journal of Magnetism and Magnetic Materials|
|Appears in Collections:||Staff Publications|
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