Please use this identifier to cite or link to this item: https://doi.org/10.1002/mmce.10001
Title: Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements
Authors: Ooi, B.L. 
Zhou, T.S.
Kooi, P.S. 
Keywords: Aluminum gallium arsenic/gallium arsenic
Heterojunction bipolar transistor
Small-signal model
Issue Date: Jul-2002
Source: Ooi, B.L., Zhou, T.S., Kooi, P.S. (2002-07). Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements. International Journal of RF and Microwave Computer-Aided Engineering 12 (4) : 311-319. ScholarBank@NUS Repository. https://doi.org/10.1002/mmce.10001
Abstract: A simple and efficient way of extracting the small-signal model parameters of the heterojunction bipolar transistor (HBT) is proposed. This novel approach provides a new insight into the strong correlation between the extrinsic and intrinsic HBT model parameters and raises the optimization efficiency by drastically reducing the search space. For the first time in HBT modeling, an explicit equation on the total extrinsic elements is derived, which results in a reduction of the number of optimization variables. The simulation results are presented and it is shown that this new method can yield a good fit between measured and simulated S parameters.
Source Title: International Journal of RF and Microwave Computer-Aided Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/55797
ISSN: 10964290
DOI: 10.1002/mmce.10001
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Dec 13, 2017

WEB OF SCIENCETM
Citations

1
checked on Nov 16, 2017

Page view(s)

32
checked on Dec 16, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.