Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1566469
Title: Effects of tensile strain in barrier on optical gain spectra of GalnNAs/GaASn quantum wells
Authors: Fan, W.J.
Ng, S.T.
Yoon, S.F.
Li, M.F. 
Chong, T.C. 
Issue Date: 1-May-2003
Citation: Fan, W.J., Ng, S.T., Yoon, S.F., Li, M.F., Chong, T.C. (2003-05-01). Effects of tensile strain in barrier on optical gain spectra of GalnNAs/GaASn quantum wells. Journal of Applied Physics 93 (9) : 5836-5838. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1566469
Abstract: The effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells were discussed. It was found that the transition energy decreased with when increasing the N composition in the barrier. The analysis showed that the transparency carrier density increased with the nitrogen composition in the GaAsN barrier and the transparency radiative current density decreased with more nitrogen being added into the barrier.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55782
ISSN: 00218979
DOI: 10.1063/1.1566469
Appears in Collections:Staff Publications

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