Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2908042
Title: Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy
Authors: Chia, C.K.
Dong, J.R.
Chi, D.Z.
Sridhara, A.
Wong, A.S.W.
Suryana, M.
Dalapati, G.K.
Chua, S.J.
Lee, S.J. 
Issue Date: 2008
Source: Chia, C.K., Dong, J.R., Chi, D.Z., Sridhara, A., Wong, A.S.W., Suryana, M., Dalapati, G.K., Chua, S.J., Lee, S.J. (2008). Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy. Applied Physics Letters 92 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2908042
Abstract: GaAsAlAsGe (100) samples grown at 650 °C with AlAs interfacial layer thickness of 0, 10, 20, and 30 nm were characterized using transmission electron microscopy, secondary ion mass spectrometry (SIMS), and photoluminescence (PL) techniques. SIMS results indicate that the presence of an ultrathin AlAs interfacial layer at the GaAsGe interface has dramatically blocked the cross diffusion of Ge, Ga, and As atoms, attributed to the higher Al-As bonding energy. The optical quality of the GaAs epitaxy with a thin AlAs interfacial layer is found to be improved with complete elimination of PL originated from Ge-based complexes, in corroboration with SIMS results. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55770
ISSN: 00036951
DOI: 10.1063/1.2908042
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