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|Title:||Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts|
Effective Schottky barrier
|Citation:||Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2007-12). Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts. IEEE Electron Device Letters 28 (12) : 1102-1104. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910003|
|Abstract:||We explore a novel integration approach that introduces valence-mending adsorbates such as sulfur (S) or selenium (Se) by ion implantation and prior to nickel silicidation for the effective reduction of contact resistance and Schottky Barrier (SB) height at the NiSi/n-Si interface. While a low SB height of ∼0.12 eV can be obtained for NiSi formed on S-implanted n-Si, the insertion of a 1000 °C anneal prior to silicidation leads to S outdiffusion and loss of SB modulation effects. We demonstrate that Se-implanted Si does not suffer from Se outdiffusion even after a 1000 °C anneal, and subsequent Ni silicidation formed an excellent ohmic contact with a low SB height of 0.13 eV. Se segregation at the NiSi/n-Si (100) interface occurred. Implantation of Se and its segregation at the NiSi/n-Si interface is a simple and promising approach for achieving reduced SB height and contact resistance in future high-performance n-channel field-effect transistors. © 2007 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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