Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.910003
Title: Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts
Authors: Wong, H.-S.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Keywords: Contact resistance
Effective Schottky barrier
Schottky barriers
Selenium
Sulfur
Issue Date: Dec-2007
Source: Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2007-12). Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts. IEEE Electron Device Letters 28 (12) : 1102-1104. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910003
Abstract: We explore a novel integration approach that introduces valence-mending adsorbates such as sulfur (S) or selenium (Se) by ion implantation and prior to nickel silicidation for the effective reduction of contact resistance and Schottky Barrier (SB) height at the NiSi/n-Si interface. While a low SB height of ∼0.12 eV can be obtained for NiSi formed on S-implanted n-Si, the insertion of a 1000 °C anneal prior to silicidation leads to S outdiffusion and loss of SB modulation effects. We demonstrate that Se-implanted Si does not suffer from Se outdiffusion even after a 1000 °C anneal, and subsequent Ni silicidation formed an excellent ohmic contact with a low SB height of 0.13 eV. Se segregation at the NiSi/n-Si (100) interface occurred. Implantation of Se and its segregation at the NiSi/n-Si interface is a simple and promising approach for achieving reduced SB height and contact resistance in future high-performance n-channel field-effect transistors. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55766
ISSN: 07413106
DOI: 10.1109/LED.2007.910003
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